A multilayer AgGaS2structure for infrared (2–10 &mgr;m) electro‐optic tunable filters: Fabrication and performance
作者:
S. R. Sashital,
R. R. Stephens,
J. F. Lotspeich,
期刊:
Journal of Applied Physics
(AIP Available online 1986)
卷期:
Volume 59,
issue 3
页码: 757-760
ISSN:0021-8979
年代: 1986
DOI:10.1063/1.336596
出版商: AIP
数据来源: AIP
摘要:
Alternating layers of high‐ and low‐resistivity silver thiogallate (AgGaS2) were grown sequentially by liquid‐phase epitaxy on AgGaS2substrates using the vertical dipping technique. High‐resistivity layers were grown by using KCl‐AgGaS2solutions while low‐resistivity layers were grown from Ge‐AgGaS2‐KCl solutions. Layer growth of such a multilayer device and demonstration of its electro‐optic response for filter application are described.
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