The growth of thin, heavily doped layers for hot electron devices
作者:
J. J. Harris,
J. M. Woodcock,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1983)
卷期:
Volume 1,
issue 2
页码: 196-198
ISSN:0734-211X
年代: 1983
DOI:10.1116/1.582486
出版商: American Vacuum Society
关键词: layers;tin additions;silicon additions;beryllium additions;gallium arsenides;schottky barrier diodes;crystal doping;molecular beam epitaxy
数据来源: AIP
摘要:
Thin layers of GaAs, heavily doped with Sn, Si, or Be, have been incorporated into Schottky barrier diode and bulk unipolar (camel) diode structures. The effective barrier height of the Schottky diodes has been varied between 0.48 and 0.96 eV by changing the doping and thickness of the heavily doped layer adjacent to the metal contact, and camel diodes with barriers between 0.55 and 0.94 eV have also been fabricated. There is a quantitative discrepancy between the experimental and theoretical diode parameters, however, and possible explanations are discussed.
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