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Junction Field Effect Transistors at 4.2 K

 

作者: R. R. Wagner,   P. T. Anderson,   B. Bertman,  

 

期刊: Review of Scientific Instruments  （AIP Available online 1970）
卷期: Volume 41, issue 7  

页码: 917-919

 

ISSN:0034-6748

 

年代: 1970

 

DOI:10.1063/1.1684726

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report the behavior of 24 different types of junction field effect transistors at 4.2 K, giving the characteristics (gain, bandwidth, and noise) of the six different types which make satisfactory amplifiers.

 

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