首页   按字顺浏览 期刊浏览 卷期浏览 Determination of the natural valence‐band offset in the InxGa1−xAs system
Determination of the natural valence‐band offset in the InxGa1−xAs system

 

作者: J. Hwang,   P. Pianetta,   C. K. Shih,   W. E. Spicer,   Y.‐C. Pao,   J. S. Harris,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 51, issue 20  

页码: 1632-1633

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.98578

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The natural valence‐band offset (NVBO) between semiconductors in a common anion alloy system can be determined through photoemission core level measurements. In this work, we tested this method in the InxGa1−xAs system. The NVBO between GaAs and InAs is measured to be 0.11±0.05 eV. This result is in approximate agreement with the experimental value of 0.17±0.07 eV determined by x‐ray photoemission spectroscopy measurements.

 

点击下载:  PDF (253KB)



返 回