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Application of phase‐sensitive photoreflectance spectroscopy to a study of undoped AlGaAs/GaAs quantum well structures

 

作者: P. J. Hughes,   B. L. Weiss,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1996）
卷期: Volume 14, issue 2  

页码: 632-637

 

ISSN:1071-1023

 

年代: 1996

 

DOI:10.1116/1.589148

 

出版商: American Vacuum Society

 

关键词: ALUMINIUM ARSENIDES;GALLIUM ARSENIDES;AMBIENT TEMPERATURE;(Al,Ga)As;GaAs

 

数据来源: AIP

 

摘要:

Phase‐sensitive photoreflectance (PR) has been used here to study undoped AlGaAs/GaAs single and multiple quantum well structures. The PR features of these structures exhibited a phase detection angle dependence as a function of spectral energy at the output of the lock‐in amplifier, which was attributed to the differences in temporal behavior of the PR features from different layers within these structures.

 

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