首页   按字顺浏览 期刊浏览 卷期浏览 Fabrication of sub‐20 nm trenches in silicon nitride using CHF3/O2reactive ion etching ...
Fabrication of sub‐20 nm trenches in silicon nitride using CHF3/O2reactive ion etching and oblique metallization

 

作者: T. K. S. Wong,   S. G. Ingram,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 6  

页码: 2393-2397

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.586073

 

出版商: American Vacuum Society

 

关键词: SILICON NITRIDES;ETCHING;SPATIAL RESOLUTION;PMMA;MICROELECTRONICS;LITHOGRAPHY;ELECTRON BEAMS;OXYGEN;FLUORINATED ALIPHATIC HYDROCARBONS;SiN;PMMA

 

数据来源: AIP

 

摘要:

A direct process for fabricating nanometer size trenches in Si3N4using high voltage electron beam lithography and CHF3/O2reactive ion etching has been developed and characterized. The process can be used on both bulk and thin membrane substrates and has demonstrated a feature resolution of better than 20 nm. An extension of this process allows 15 nm wide slots to be fabricated in a metal film without performing any metal etching.

 

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