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GaAs nanocrystals formed by sequential ion implantation

 

作者: C. W. White,   J. D. Budai,   J. G. Zhu,   S. P. Withrow,   R. A. Zuhr,   D. M. Hembree,   D. O. Henderson,   A. Ueda,   Y. S. Tung,   R. Mu,   R. H. Magruder,  

 

期刊: Journal of Applied Physics  （AIP Available online 1996）
卷期: Volume 79, issue 4  

页码: 1876-1880

 

ISSN:0021-8979

 

年代: 1996

 

DOI:10.1063/1.361088

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Sequential ion implantation of As and Ga into SiO2and &agr;‐Al2O3followed by thermal annealing has been used to form zinc‐blende GaAs nanocrystals in these two matrices. In SiO2, the nanocrystals are nearly spherical and randomly oriented, with diameters less than 15 nm. In Al2O3, the nanocrystals are three dimensionally aligned with respect to the crystal lattice. Infrared reflectance measurements show evidence for surface phonon modes in the GaAs nanocrystals in these matrices. ©1996 American Institute of Physics.

 

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