首页   按字顺浏览 期刊浏览 卷期浏览 Photoconductivity of Si/Ge structures
Photoconductivity of Si/Ge structures

 

作者: M. Arndt,   W. Koschinski,   K. Dettmer,   F. R. Kessler,   H. J. Kriks,  

 

期刊: Applied Physics Letters  (AIP Available online 1995)
卷期: Volume 67, issue 5  

页码: 644-646

 

ISSN:0003-6951

 

年代: 1995

 

DOI:10.1063/1.115189

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Photoconductivity (PC) spectroscopy is used to determine the optical absorption and behavior of free carriers of Si/Ge structures and (Si6Ge4)100superlattices grown on Si0.4Ge0.6alloys. Negative photoconductivity is observed at a temperature of 67 K. Some samples are additionally doped by nuclear transmutation. These samples exhibit a strong negative PC signal even at room temperature, which cannot be suppressed by a bias illumination. ©1995 American Institute of Physics.

 

点击下载:  PDF (74KB)



返 回