Photoconductivity of Si/Ge structures
作者:
M. Arndt,
W. Koschinski,
K. Dettmer,
F. R. Kessler,
H. J. Kriks,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 5
页码: 644-646
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115189
出版商: AIP
数据来源: AIP
摘要:
Photoconductivity (PC) spectroscopy is used to determine the optical absorption and behavior of free carriers of Si/Ge structures and (Si6Ge4)100superlattices grown on Si0.4Ge0.6alloys. Negative photoconductivity is observed at a temperature of 67 K. Some samples are additionally doped by nuclear transmutation. These samples exhibit a strong negative PC signal even at room temperature, which cannot be suppressed by a bias illumination. ©1995 American Institute of Physics.
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