首页   按字顺浏览 期刊浏览 卷期浏览 Defect analysis in polycrystalline silicon solar cells
Defect analysis in polycrystalline silicon solar cells

 

作者: O. S. Sastry,   V. Dutta,   A. K. Mukerjee,   K. L. Chopra,  

 

期刊: Journal of Applied Physics  （AIP Available online 1985）
卷期: Volume 57, issue 12  

页码: 5506-5511

 

ISSN:0021-8979

 

年代: 1985

 

DOI:10.1063/1.334828

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Localized bulk defects like diffusion length variations and structural defects like grain boundaries are analyzed in polycrystalline silicon solar cells using laser scanning and deep level transient spectroscopy techniques. The effect of hydrogen passivation on the role of grain boundaries has been studied.

 

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