Double Injection in Trap‐Free Silicon at Low Operating Points
作者:
M. Hiramatsu,
S. Okazaki,
期刊:
Journal of Applied Physics
(AIP Available online 1969)
卷期:
Volume 40,
issue 13
页码: 5312-5315
ISSN:0021-8979
年代: 1969
DOI:10.1063/1.1657388
出版商: AIP
数据来源: AIP
摘要:
Double injection currents are measured over the temperature range from 340° to 200°K with plane parallel metal‐semiconductor‐metal structures. It is shown that, in the absence of traps, the injecting junction limits the current at low operating points. The current‐voltage characteristics are analyzed considering the property of the injection contact.
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