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Properties of very low temperature plasma deposited silicon nitride films

 

作者: C. Juang,   J. H. Chang,   R. Y. Hwang,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 3  

页码: 1221-1223

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.585892

 

出版商: American Vacuum Society

 

关键词: SILICON NITRIDES;SILANES;CHEMICAL VAPOR DEPOSITION;THIN FILMS;PLASMA;NITROGEN;THERMAL CONDUCTIVITY;HYDROGEN BONDS;SiN2

 

数据来源: AIP

 

摘要:

Plasma enhanced deposition of silicon nitride films is shown to have less N–H bonds and provide better heat resistance using SiH4–N2than SiH4–NH3–N2plasmas at 100 °C. Properties of silicon nitride using SiH4–N2plasma are studied versus various deposition parameters such as radio frequency power, silane flow ratio, and deposition pressure. The experimental data indicate that the deposition process at 100 °C has a N2‐reaction‐controlled mechanism.

 

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