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Patterned eutectic bonding with Al/Ge thin films for microelectromechanical systems

 

作者: Bao Vu,   Paul M. Zavracky,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  (AIP Available online 1996)
卷期: Volume 14, issue 4  

页码: 2588-2594

 

ISSN:1071-1023

 

年代: 1996

 

DOI:10.1116/1.588991

 

出版商: American Vacuum Society

 

关键词: EQUIPMENT;SILICON;BONDING;EUTECTICS;ALUMINIUM ALLOYS;GERMANIUM ALLOYS;THIN FILMS;SAMPLE PREPARATION;LEAK TESTING;Si;(Al,Ge)

 

数据来源: AIP

 

摘要:

In this article, we report our results using the aluminum/germanium eutectic to create high quality patterned bonds between two silicon dice. The bonds are formed using thin metal layers and with essentially no pressure applied. We have measured bond strength by fabricating and bonding patterned dice. Pull tests were conducted and the force required to separate the bonds was measured and found to be about 1.6×107Pa. When bonds break, portions of the substrate are removed. Testing of the hermiticity of the bond demonstrated that leak rates below the detection limit of the leak tester (10−9sccs) are possible.

 

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