Patterned eutectic bonding with Al/Ge thin films for microelectromechanical systems
作者:
Bao Vu,
Paul M. Zavracky,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1996)
卷期:
Volume 14,
issue 4
页码: 2588-2594
ISSN:1071-1023
年代: 1996
DOI:10.1116/1.588991
出版商: American Vacuum Society
关键词: EQUIPMENT;SILICON;BONDING;EUTECTICS;ALUMINIUM ALLOYS;GERMANIUM ALLOYS;THIN FILMS;SAMPLE PREPARATION;LEAK TESTING;Si;(Al,Ge)
数据来源: AIP
摘要:
In this article, we report our results using the aluminum/germanium eutectic to create high quality patterned bonds between two silicon dice. The bonds are formed using thin metal layers and with essentially no pressure applied. We have measured bond strength by fabricating and bonding patterned dice. Pull tests were conducted and the force required to separate the bonds was measured and found to be about 1.6×107Pa. When bonds break, portions of the substrate are removed. Testing of the hermiticity of the bond demonstrated that leak rates below the detection limit of the leak tester (10−9sccs) are possible.
点击下载:
PDF
(457KB)
返 回