Signal magnitudes in high density ferroelectric memories
作者:
Wayne Kinney,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1994)
卷期:
Volume 4,
issue 2
页码: 131-144
ISSN:1058-4587
年代: 1994
DOI:10.1080/10584589408018668
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
We review several issues affecting the signal delivered to a sense-amp in high density ferroelectric nonvolatile memories. Typical DRAM parameters are used to approximate the expected signal and to determine constraints on ferroelectric properties. These calculations pertain to memories which are destructively read and which use either a 1T/1C (one cell per bit) or a 2T/2C (two cells per bit) architecture.
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