Polycrystalline silicon ‘‘slit nanowire’’ for possible quantum devices
作者:
Yasuo Wada,
Tokuo Kure,
Toshiyuki Yoshimura,
Yoshimi Sudou,
Takashi Kobayashi,
Yasushi Gotou,
Seiichi Kondo,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 1
页码: 48-53
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587104
出版商: American Vacuum Society
关键词: NANOSTRUCTURES;FABRICATION;WIRES;SILICON;POLYCRYSTALS;LITHOGRAPHY;ETCHING;DEPOSITION;ANNEALING;INTEGRATED OPTICS;INTEGRATED CIRCUITS;Si
数据来源: AIP
摘要:
Polycrystalline silicon (poly‐Si) ‘‘slit nanowire’’ was fabricated in a slit formed with 100 nm lithography, microwave dry etching of silicon substrate, conformable filling of the trench by chemical vapor deposition (CVD) SiO2, slit etching of the CVD SiO2, conformable deposition of doped amorphous silicon, followed by etchback and annealing. Observation with transmission electron microscope confirmed that a poly‐Si slit nanowire, with a cross section of ∼5–8 nm×20 nm is fabricated. Appropriate annealing of thea‐Si layer makes the poly‐Si grains grow to more than 2 μm in length. This technique would make it possible to realize silicon quantum devices, and to fabricate conventional integrated circuit devices and light emitting slit nanowire devices on a same silicon chip, which would allow the fabrication of integrated optoelectronic circuits.
点击下载:
PDF
(617KB)
返 回