AbstractWe can see clear indications that the traditional HV‐Thin Film processes today, to a greater extent than earlier, are conducted in UHV reactors. The reduced background‐pressure makes it possible to produce better layers with less impurities and with sharp interfaces. UHV conditions also bring possibilities of in‐situ analysis. We acknowledge that the advantages are mainly those concerning inorganic device issues. There are also numerous other possibilities for growing organic materials, however this field of science is in an initial stage. In order to exchange practical experience in the field of Vacuum System Design, more contact is needed between the Thin Film Research community and the Nuclear Physics and Surface Analysis G