Observations of ferroelectric polarization reversal in sol‐gel processed very thin lead‐zirconate‐titanate films
作者:
Lloyd E. Sanchez,
Shu‐Yau Wu,
Ishver K. Naik,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 24
页码: 2399-2401
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102891
出版商: AIP
数据来源: AIP
摘要:
Very thin lead‐zirconate‐titanate films, 500 A˚ or less in thickness, have been prepared on Pt‐Ti metallized silicon wafers by a sol‐gel processing technique. Excellent ferroelectric, dielectric, and structural properties have been demonstrated. The maximum polarization and the remanent polarization at a switching voltage of 3 V on a film with a Zr/Ti ratio of about 50/50 are 33 and 12 &mgr;C/cm2, respectively. The capability of reaching a saturation polarization at a low voltage (∼3 V) on these films suggests that they are very attractive for use in radiation‐hard low‐voltage nonvolatile programmable random access memories.
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