The wall recombination coefficient (γ) of several materials for atomic oxygen was measured introducing a new method based on the NO*2continuum in a discharge‐flow system. This method has many advantages, such as the ability of measuring γ under different pressures, nonessentiality of measuring absolute atom concentrations, simplicity of experimental technique, etc. over the previous methods. Investigated materials in this work were selected specially considering the feasibility of industrial applications of plasmas. Although a few metals show slight differences, most of the calculated values of γ are in agreement with the literature values. Observed γ for Al and Al based materials were in the order of 10−3. The highest and lowest γ measured were of Cu and teflon, as 2.6×10−2and 7.3×10−5, respectively.