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Chemical and plasmachemical vapour deposition of aluminium nitride layers

 

作者: H. Arnold,   L. Biste,   D. Bolze,   G. Eichhorn,  

 

期刊: Kristall und Technik  （WILEY Available online 1976）
卷期: Volume 11, issue 1  

页码: 17-21

 

ISSN:0023-4753

 

年代: 1976

 

DOI:10.1002/crat.19760110104

 

出版商: WILEY‐VCH Verlag

 

数据来源: WILEY

 

摘要:

AbstractAIN was deposited pyrolytically by means of the aluminium trichloride‐ammonia process (either introducing both compounds seperately or in complex form) and by plasmachemical reaction of aluminium trichloride with nitrogen at temperatures from 600 to 1300°C. Layers deposited onto (100) spinel had an epitaxial (0001) orientation, whereas fibre textures resulted on silicon and quartz gla

 

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