Planarp-ndiodes with edge termination were fabricated by aluminum implantation onn-type4Hsilicon carbide. These diodes exhibited an excellent blocking behavior up to 1400 V reverse voltage with stable avalanche breakdown at an electric field strength of 2.8 MV/cm. In addition, a nearly classical forward characteristic was observed with both recombination and diffusion current mechanism represented by ideality factors of 1.05 and 1.93, respectively. The turn-on voltage was 2.8 V. At a forward voltage drop of 6.2 V a current density of4000 A/cm2and a differential on resistance below1 m&OHgr; cm2were achieved. ©1997 American Institute of Physics.