首页   按字顺浏览 期刊浏览 卷期浏览 Absence of Stark shift in strained Si1−xGex/Si type‐I quantum wells
Absence of Stark shift in strained Si1−xGex/Si type‐I quantum wells

 

作者: Y. Miyake,   J. Y. Kim,   Y. Shiraki,   S. Fukatsu,  

 

期刊: Applied Physics Letters  (AIP Available online 1996)
卷期: Volume 68, issue 15  

页码: 2097-2099

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.115596

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Excitonic photoluminescence in a transverse electric field has been studied in strained Si1−xGex/Si type‐I quantum wells (QWs) in the weak field regime. With increasing electric field, a steady blue‐shift of the free exciton emission energies has been observed, thereby suppressing the anticipated downward shift due to a quantum confined Stark effect. It is revealed that a field‐driven decrease of the exciton binding energies gives a good account of the experimental blue‐shift for a wide range of well widths, which is also in good agreement with variational calculations. We also find that the extremely small conduction band offset characteristic of stained Si1−xGex/Si type‐I QWs is responsible for the absence of the Stark red‐shift and the mixed dimensionality. ©1996 American Institute of Physics.

 

点击下载:  PDF (76KB)



返 回