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Ferroelectric-gate transistor as a capacitor-less DRAM cell (FEDRAM)

 

作者: Jin-Ping Han,   T.P. Ma,  

 

期刊: Integrated Ferroelectrics  （Taylor Available online 1999）
卷期: Volume 27, issue 1-4  

页码: 9-18

 

ISSN:1058-4587

 

年代: 1999

 

DOI:10.1080/10584589908228451

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The Metal-Ferroelectric-Insulator-Semiconductor FET structure (or MFISFET) has been studied as a non-volatile memory device1-4ever since the IEEE publication by Wu4in 1974. However, so far there has not been any commercial product, because of some severe problems, including interface problems and retention time problem, among others.

 

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