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Approximation for the Fermi–Dirac integral with applications to the modeling of charge transport in heavily doped semiconductors

 

作者: M. Abdus Sobhan,   S. NoorMohammad,  

 

期刊: Journal of Applied Physics  (AIP Available online 1985)
卷期: Volume 58, issue 7  

页码: 2634-2637

 

ISSN:0021-8979

 

年代: 1985

 

DOI:10.1063/1.335893

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Analytical formulas for evaluating Fermi–Dirac integral of order (1)/(2) has been proposed. The formulas exhibit a degeneracy factorCwhich controls essentially the applicability of the integrals both to the nondegenerate as well as highly degenerate semiconductors. The accuracies with which the derivative can be evaluated by differentiation and integration of the proposed formulas are acceptable. The formulas have been successfully used in the calculation of effective carrier concentration and current density.

 

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