Approximation for the Fermi–Dirac integral with applications to the modeling of charge transport in heavily doped semiconductors
作者:
M. Abdus Sobhan,
S. NoorMohammad,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 58,
issue 7
页码: 2634-2637
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335893
出版商: AIP
数据来源: AIP
摘要:
Analytical formulas for evaluating Fermi–Dirac integral of order (1)/(2) has been proposed. The formulas exhibit a degeneracy factorCwhich controls essentially the applicability of the integrals both to the nondegenerate as well as highly degenerate semiconductors. The accuracies with which the derivative can be evaluated by differentiation and integration of the proposed formulas are acceptable. The formulas have been successfully used in the calculation of effective carrier concentration and current density.
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