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Laser induced photodesorption of SiCl from Si(100) monitored by time of flight and time resolved reflectivity

 

作者: J. Boulmer,   B. Bourguignon,   J.‐P. Budin,   D. Débarre,   A. Desmur,  

 

期刊: Journal of Vacuum Science&Technology A: Vacuum, Surfaces, and Films  （AIP Available online 1991）
卷期: Volume 9, issue 6  

页码: 2923-2927

 

ISSN:0734-2101

 

年代: 1991

 

DOI:10.1116/1.577152

 

出版商: American Vacuum Society

 

关键词: SILICON;SILICON CHLORIDES;REFLECTIVITY;PHOTON STIMULATED DESORPTION;LASER RADIATION;SORPTIVE PROPERTIES;MELTING;BINARY COMPOUNDS;Si;SiCl

 

数据来源: AIP

 

摘要:

The excimer laser induced desorption rate of SiCl molecules from a chlorinated silicon surface is measured in real time together with the transient change of the surface reflectivity at 632.8 nm. It is demonstrated that, under conditions where gas‐phase chlorine is not photoexcited and does not collide with the surface during the laser pulse, laser induced desorption occurs only when the surface melts, at the laser wavelengths 308 and 248 nm.

 

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