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GaAs based anti-resonant Fabry–Perot saturable absorber fabricated by metal organic vapor phase epitaxy and ion implantation

 

作者: M. J. Lederer,   B. Luther-Davies,   H. H. Tan,   C. Jagadish,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 70, issue 25  

页码: 3428-3430

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119192

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have fabricated an antiresonant Fabry–Perot saturable absorber (A-FPSA), for potential use in laser passive mode locking, using metalorganic vapor phase epitaxy followed by ion implantation and thermal annealing. We show that the implantation/annealing cycle shortens the free-carrier dwell time without degrading the other optical properties of the A-FPSA. ©1997 American Institute of Physics.

 

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