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Generation of femtosecond electromagnetic pulses from semiconductor surfaces

 

作者: X.‐C. Zhang,   B. B. Hu,   J. T. Darrow,   D. H. Auston,  

 

期刊: Applied Physics Letters  (AIP Available online 1990)
卷期: Volume 56, issue 11  

页码: 1011-1013

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.102601

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have generated electromagnetic beams from a variety of semiconductors. When a bare semiconductor wafer was illuminated by femtosecond optical pulses, electromagnetic waves radiate from the surface and form collinear diffraction‐limited electromagnetic beams in the inward and outward directions. The amplitude and phase of the radiated field depend on carrier mobility, the strength and polarity of the static internal field at the semiconductor surface.

 

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