Generation of femtosecond electromagnetic pulses from semiconductor surfaces
作者:
X.‐C. Zhang,
B. B. Hu,
J. T. Darrow,
D. H. Auston,
期刊:
Applied Physics Letters
(AIP Available online 1990)
卷期:
Volume 56,
issue 11
页码: 1011-1013
ISSN:0003-6951
年代: 1990
DOI:10.1063/1.102601
出版商: AIP
数据来源: AIP
摘要:
We have generated electromagnetic beams from a variety of semiconductors. When a bare semiconductor wafer was illuminated by femtosecond optical pulses, electromagnetic waves radiate from the surface and form collinear diffraction‐limited electromagnetic beams in the inward and outward directions. The amplitude and phase of the radiated field depend on carrier mobility, the strength and polarity of the static internal field at the semiconductor surface.
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