Implantation and thermal annealing behaviour of Bi imlanted into the Al/KCl bilayer compound
作者:
C.A. Oliviri,
M. Behar,
P.F. P. Fichtner,
F.C. Zawislak,
D. Fink,
J.P. Biersack,
期刊:
Radiation Effects
(Taylor Available online 1986)
卷期:
Volume 98,
issue 1-4
页码: 27-33
ISSN:0033-7579
年代: 1986
DOI:10.1080/00337578608206094
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
A bilayer system composed of an Al 610 Å film evaporated onto a KCl single crystal and a pure KCl single crystal were both implanted with 300 keV209Bi+. The Bi depth distribution agrees with the Monte-Carlo simulation predictions in both systems. Diffusion of Bi in the Al film and in the KCl substrate of the Al/KCl system, as well as in the pure KCl crystal, is studied as a function of isochronal annealing. For low temperatures up to 200°C we observe enhanced diffusion of Bi in all systems. At higher temperatures (up to 500°C) a regular diffusion governs the depth profiles.
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