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Implantation and thermal annealing behaviour of Bi imlanted into the Al/KCl bilayer compound

 

作者: C.A. Oliviri,   M. Behar,   P.F. P. Fichtner,   F.C. Zawislak,   D. Fink,   J.P. Biersack,  

 

期刊: Radiation Effects  (Taylor Available online 1986)
卷期: Volume 98, issue 1-4  

页码: 27-33

 

ISSN:0033-7579

 

年代: 1986

 

DOI:10.1080/00337578608206094

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

A bilayer system composed of an Al 610 Å film evaporated onto a KCl single crystal and a pure KCl single crystal were both implanted with 300 keV209Bi+. The Bi depth distribution agrees with the Monte-Carlo simulation predictions in both systems. Diffusion of Bi in the Al film and in the KCl substrate of the Al/KCl system, as well as in the pure KCl crystal, is studied as a function of isochronal annealing. For low temperatures up to 200°C we observe enhanced diffusion of Bi in all systems. At higher temperatures (up to 500°C) a regular diffusion governs the depth profiles.

 

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