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Stress‐free GaAs grown on Si using a stress balance approach

 

作者: A. Freundlich,   J. C. Grenet,   G. Neu,   G. Stobl,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 59, issue 27  

页码: 3568-3570

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.105634

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A novel technique, based on a stress balance principle, is proposed to control residual stress magnitude in GaAs layers grown on Si substrates. It is demonstrated that, using a suitable GaAs1−xPxbuffer layer, room (300 K) or low (2 K) temperature stress‐free GaAs can be grown on Si (100).

 

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