Effect of Ti substitution on the thermoelectric properties of the pentatelluride materialsM1−xTixTe5(M=Hf, Zr)
作者:
R. T. Littleton,
Terry M. Tritt,
C. R. Feger,
J. Kolis,
M. L. Wilson,
M. Marone,
J. Payne,
D. Verebeli,
F. Levy,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 16
页码: 2056-2058
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121406
出版商: AIP
数据来源: AIP
摘要:
The thermoelectric properties (resistivity and thermopower) of single crystals of the low dimensional pentatelluride materials,HfTe5 andZrTe5,have been measured as a function of temperature from 10K<T<320K. The effect of small amounts of Ti substitutional doping(M1−xTixTe5,whereM=Hf, Zr) on the thermoelectric properties is reported here. A resistive transition occurs in the pentatellurides, as evidenced by a peak in the resistivity,TP≈80K forHfTe5andTP≈145K forZrTe5.Both parent materials exhibit a large positive (p-type) thermopower near room temperature which undergoes a change to negative (n-type) below the peak temperature. The thermal conductivity is relatively low (≈5 W/m K) for theMTe5materials. The Ti substitution affects the electronic properties strongly, producing a substantial shift in the peak temperature while the large values of thermopower remain essentially unaffected. These results warrant further investigation of these materials as candidates for low temperature thermoelectric applications. ©1998 American Institute of Physics.
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