InGaAs/AlGaAs laser diode arrays fabricated with differing amounts of In in the quantum well active layer are characterized by threshold currents of 115 A/cm2, transparency currents of 50 A/cm2, optical losses of 3 cm−1, and wavelengths to 960 nm for In compositions of 20%. Gain coefficient measurements indicate an increase from 0.0535 to 0.0691 cm &mgr;m/A for quantum well lasers with 0% InAs and 10–20% InAs, respectively. The maximum output power achieved for a device with a 100 &mgr;m aperture is 3 W cw.