Spatial correlations acrossn+nsemiconductor junctions
作者:
O. M. Bulashenko,
G. Gomila,
J. M. Rubı´,
V. A. Kochelap,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 24
页码: 3248-3250
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119151
出版商: AIP
数据来源: AIP
摘要:
An analytical model for the spatial correlations and noise across an abruptn+njunction is presented. The model is able to treat the junction as a whole in strongly inhomogeneous conditions self-consistently, by taking into account both the drift and diffusion contributions to the current. It is shown that within the analytical approach, the voltage noise across the junction can be decomposed into the sample and the contact contributions and the term representing sample-contact cross correlation. It is argued that the proposed analytical method is quite universal and could be effectively applied to different devices, operating under strongly inhomogeneous distributions of the electric field and charge concentration. ©1997 American Institute of Physics.
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