Computer technique for solving schottky barrier from dark forward current-voltage characteristics
作者:
C.Boutrit,
J.C.Georges,
S.Ravelet,
期刊:
IEE Proceedings I (Solid-State and Electron Devices)
(IET Available online 1980)
卷期:
Volume 127,
issue 5
页码: 250-252
年代: 1980
DOI:10.1049/ip-i-1.1980.0050
出版商: IEE
数据来源: IET
摘要:
The paper describes a computer technique for determining series resistance, shunt conductance, saturation current, ideality factor, and hence the apparent barrier height of metal-semiconductor devices from dark forward current characteristics using a least-squares fitting of experimental measurements with a theoretical model. The model used is based on the thermionic theory, incorporating both series and shunt resistance effects.
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