We demonstrate the operation of a surface emitting light emitting diode. The wavelength of the emitted light can be tuned with the applied voltage. The device is based on ap‐GaAs andn‐Ga1−xAlxAs heterojunction containing an inversion layer in thepside and, GaAs quantum wells in thenside, and, is referred to as HELLISH‐II (hot electron light emitting and lasing in semiconductor heterojunction). The device utilizes hot electron longitudinal transport and, therefore, light emission is independent of the polarity of the applied voltage. ©1995 American Institute of Physics.