Using soft lithography to fabricate GaAs/AlGaAs heterostructure field effect transistors
作者:
Junmin Hu,
R. G. Beck,
Tao Deng,
R. M. Westervelt,
K. D. Maranowski,
A. C. Gossard,
George M. Whitesides,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 14
页码: 2020-2022
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119774
出版商: AIP
数据来源: AIP
摘要:
This letter describes the fabrication of functional GaAs/AlGaAs field effect transistors using micromolding in capillaries—a representative soft lithographic technique. The fabrication process involved three soft lithographic steps and two registration steps. Room temperature characteristics of these transistors resemble those of field effect transistors fabricated by photolithography. The fabrication of functional microelectronic devices using multilayer soft lithography establishes the compatibility of these techniques with the processing methods used in device fabrication, and opens the door for their development as a technique in this area. ©1997 American Institute of Physics.
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