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Optimization of interfaces in InGaAs/InP heterostructures grown by gas source molecular‐beam epitaxy

 

作者: T. Mozume,   H. Kashima,   K. Hosomi,   K. Ouchi,   H. Sato,   H. Masuda,   T. Tanoue,   I. Ohbu,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1995）
卷期: Volume 13, issue 2  

页码: 276-280

 

ISSN:1071-1023

 

年代: 1995

 

DOI:10.1116/1.588364

 

出版商: American Vacuum Society

 

关键词: SEMICONDUCTOR JUNCTIONS;HETEROSTRUCTURES;TERNARY COMPOUNDS;INDIUM PHOSPHIDES;INDIUM ARSENIDES;GALLIUM ARSENIDES;MOLECULAR BEAM EPITAXY;INTERFACE STRUCTURE;OPTIMIZATION;PHOTOLUMINESCENCE;AES;TEM;InP;(In,Ga)As

 

数据来源: AIP

 

摘要:

A novel source switching procedure in gas source molecular‐beam epitaxy achieves abrupt interfaces in lattice‐matched InGaAs/InP. In this procedure, the source supply is interrupted at each interface to reduce excess residual As or P atoms on the InGaAs or InP surfaces. The interruption time is optimized by characterizing the heterointerfaces by Auger electron microscopy and photoluminescence spectroscopy. High‐resolution transmission electron microscopy reveals that each heterointerface of single quantum wells grown by this optimized switching procedure has no transition region. To our knowledge, this is the first successful growth of a perfectly abrupt InGaAs/InP heterointerface.

 

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