AbstractEpitaxial layers of AIBIIIC 2VIcompounds were grown by the flash evaporation technique and investigated using reflection electron diffraction. Geometric‐structural considerations allow the prediction of epitaxial relationships and types of epitaxy (one‐ or three‐dimensional, multiple orientation). These properties of the epitaxial layers were confirmed experimentally. Furthermore, the epitaxial temperature ranges, non‐equilibrium phases, defects, and special features of the epitaxial growth are described. Especially, the influence of lattice misfit is