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Extrinsic ir Photoconductivity of Si Doped with B, Al, Ga, P, As, or Sb
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Extrinsic ir Photoconductivity of Si Doped with B, Al, Ga, P, As, or Sb
作者:
R. A. Soref,
期刊:
Journal of Applied Physics
(AIP Available online 1967)
卷期:
Volume 38,
issue 13
页码: 5201-5209
ISSN:0021-8979
年代: 1967
DOI:10.1063/1.1709302
出版商: AIP
数据来源: AIP
摘要:
It is shown that silicon doped with B, Al, Ga, P, As, or Sb is a fast, sensitive, and efficient detector of 10.6‐&mgr; radiation from a CO2laser. Experimental results are presented for several moderately compensated specimens. An investigation was made at temperatures from 23°–40°K of the electrical characteristics, time constant, noise, and 10.6‐&mgr; photoresponse. The results are interpreted in terms of idealized, non‐Ohmic impurity‐photoconductor models. Detectivities within a factor of three of ideal background‐limited performance were attained, and response times in the nanosecond region were found.
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