Electroluminescence was observed in ZnTe devices fabricated from crystals in which oxygen was incorporated. Main emission peaks were located at 6960 Å at 293°K and 6580 Å at 77°K, and external quantum efficiencies of 10−3–10−4were obtained at room temperature. The emission from these devices is considered to result from recombinations taking place at oxygen centers which appear to be located approximately 0.4 eV from the band edge. Improvements in the emission properties of these devices over similar diodes fabricated from undoped material are described.