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GaAs growth on (111)B substrates by molecular‐beam epitaxy: A study of the first stages of growth on ultraviolet–ozone prepared surfaces

 

作者: B. J. García,   C. Fontaine,   A. Muñoz Yagüe,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1995）
卷期: Volume 13, issue 2  

页码: 281-286

 

ISSN:1071-1023

 

年代: 1995

 

DOI:10.1116/1.588365

 

出版商: American Vacuum Society

 

关键词: BORON;GALLIUM ARSENIDES;MOLECULAR BEAM EPITAXY;RHEED;SURFACE TREATMENTS;OZONE;ULTRAVIOLET RADIATION;OXIDATION;ROUGHNESS;GaAs;B

 

数据来源: AIP

 

摘要:

UV–ozone substrate preparation and molecular‐beam epitaxial growth conditions of GaAs on (111)B GaAs substrates are reported. Changes in the reflection high‐energy electron diffraction pattern (RHEED) during the first stages of growth reflect the planarization process over an initially rough surface. New evidence of this process is reported, based on the intensity oscillations of the RHEED specular beam, which highlights a rise of the measured growth rate in the first steps of growth during surface flatness recovery.

 

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