Photoluminescence of Ge‐doped AlxGa1−xAs grown by liquid phase epitaxy
作者:
Kunio Kaneko,
Masaaki Ayabe,
期刊:
Journal of Applied Physics
(AIP Available online 1980)
卷期:
Volume 51,
issue 12
页码: 6337-6341
ISSN:0021-8979
年代: 1980
DOI:10.1063/1.327622
出版商: AIP
数据来源: AIP
摘要:
The photoluminescence of Ge‐doped AlxGa1−xAs grown by liquid phase epitaxy (LPE) was investigated. The ionization energy of Ge, determined from the photoluminescence spectra, has a strong relation to the Al composition. This cannot be explained by a simple effective mass‐like expression. The broad emission band with a peak at about 1.5 eV, which has been observed by several investigators, was studied further. The intensity of the emission band increased as Ge or as implanted O concentration increased. The peak energy shifted toward higher energy as excitation intensity increased. The paper suggests that this emission band is caused by O donor‐Ge acceptor pair recombination.
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