Nonuniform oxide charge and paramagnetic interface traps in high‐temperature annealed Si/SiO2/Si structures
作者:
K. Vanheusden,
W. L. Warren,
J. R. Schwank,
D. M. Fleetwood,
M. R. Shaneyfelt,
P. S. Winokur,
R. A. B. Devine,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 68,
issue 15
页码: 2117-2119
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.115603
出版商: AIP
数据来源: AIP
摘要:
Trivalent siliconPb0andPb1defects were identified at both the top Si(100)/buried‐SiO2and buried‐SiO2/bottom‐Si(100) interfaces in high‐temperature (1320 °C) annealed Si/SiO2/Si struc‐ tures. The paramagnetic defects are generated by annealing in a flow of pure nitrogen (N2) or forming gas [N2H2; 95:5 (by volume)] at 550 °C. In addition, the forming‐gas anneal also generated positive charge in the buried oxides; significant lateral nonuniformities in the buried oxide charge density were observed following this anneal. These macroscopic inhomogeneities may be linked to previous reports of homogeneity related problems involving the SIMOX buried oxide, such as early breakdown and etch pits, suggesting that these types of measurements may be useful as nondestructive screens of SIMOX wafer quality. ©1996 American Institute of Physics.
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