Strain compensation by Ge in B‐doped silicon epitaxial films
作者:
W. P. Maszara,
T. Thompson,
期刊:
Journal of Applied Physics
(AIP Available online 1992)
卷期:
Volume 72,
issue 9
页码: 4477-4479
ISSN:0021-8979
年代: 1992
DOI:10.1063/1.352181
出版商: AIP
数据来源: AIP
摘要:
A compensation of stress induced in silicon epitaxial films heavily doped with boron was investigated. Addition of a controlled amount of germanium during the film growth allows one to attain a desired compressive or tensile stress in the film, or its complete elimination. The data shows very good correlation with a theoretical model adapted from Herzogetal. [J. Electrochem. Soc.131, 2969 (1984)]. A 6.45 : 1 ratio of atomic concentrations of Ge and B completely eliminates stress in these films. We determined a critical amount of strain in the films, &bartil;2–4 &mgr;m thick, beyond which misfit dislocations are generated.
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