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Submicron patterned doping of GaAs using a thin solid Si dopant source by transient excimer laser melting

 

作者: Koji Sugioka,   Koichi Toyoda,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 3  

页码: 850-852

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584308

 

出版商: American Vacuum Society

 

关键词: CRYSTAL DOPING;SILICON IONS;THIN FILMS;GALLIUM ARSENIDES;LINE WIDTHS;LASER BEAM MELTING;ETCHING;EXCIMER LASERS;DIFFUSION;GaAs

 

数据来源: AIP

 

摘要:

Patterned doping of GaAs using a thin solid Si dopant source by pulsed excimer laser melting is described. Linewidths as narrow as 0.3 μm are demonstrated. The power‐dependent linewidth of the doped region agrees well with calculations of transient heat conduction in the substrate.

 

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