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Improved electronic properties of GaAs surfaces stabilized with phosphorus

 

作者: P. Viktorovitch,   M. Gendry,   S. K. Krawczyk,   F. Krafft,   P. Abraham,   A. Bekkaoui,   Y. Monteil,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 58, issue 21  

页码: 2387-2389

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.104879

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We report on a new passivation procedure of the GaAs surface based on a thermal treatment under a PH3overpressure. This treatment results, by As/P exchange, in the formation of a thin superficial GaP layer which prevents the formation of an arsenic oxide, as observed by x‐ray photoelectron spectroscopy analysis. Subsequent increase of the photoluminescence signal indicates improved electronic properties of GaAs surfaces as a result of this passivation procedure.

 

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