Noise spectra of &agr;‐SiC in the presence of space‐charge‐limited flow are attributed to trapping noise. In the ohmic regime,S&Dgr;I∝I20and in the ohmic and low‐voltage quadratic regimeS&Dgr;I∝I0‖V0‖ as required by the theory. The trapping levels are determined from the slope of the time constants versus 1/T; the results are in fair agreement with those obtained from the current‐voltage characteristic. The magnitude of the noise requires a modulation mechanism, such as caused by mobility fluctuations in the temperature range where ionized impurity scattering dominates.