Molecular dynamics-based ion-surface interaction models for ionized physical vapor deposition feature scale simulations
作者:
Daniel G. Coronell,
David E. Hansen,
Arthur F. Voter,
Chun-Li Liu,
Xiang-Yang Liu,
Joel D. Kress,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 26
页码: 3860-3862
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122917
出版商: AIP
数据来源: AIP
摘要:
A procedure is presented for incorporating the results of atomistic simulations of ion–surface interactions into integrated circuit topographic simulations of ionized physical vapor deposition (PVD). Energy and angular dependent sticking probabilities for energetic Cu atoms impacting a {111} Cu surface, obtained from molecular dynamics simulations, were implemented in a simple Monte Carlo flux model. The resulting flux-averaged Cu sticking probability was found to vary significantly with position within submicron features and with the feature geometry. This illustrates the shortcomings of a constant (energy and angle independent) sticking probability model for ionized PVD. ©1998 American Institute of Physics.
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