Fast recombination processes in lead chalcogenide semiconductors studied via transient optical nonlinearities
作者:
Robert Klann,
Thomas Ho¨fer,
Rainer Buhleier,
Thomas Elsaesser,
Jens W. Tomm,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 77,
issue 1
页码: 277-286
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.359388
出版商: AIP
数据来源: AIP
摘要:
Third‐order optical nonlinearities and recombination processes of photoexcited electron‐hole plasma in PbSe and PbTe are directly monitored by picosecond pump‐probe experiments in the wavelength range from 3 to 10 &mgr;m. After excitation, a strong blue shift of the absorption edge and large changes of the refractive index are found. Time‐resolved studies of the absorption changes at lattice temperatures between 70 and 160 K reveal a fast partial decrease of the carrier density within 100 ps at excitation densities exceeding 7×1017cm−3. Comparative emission spectra demonstrate that this behavior is due to recombination by stimulated emission. At room temperature the nonradiative Auger recombination dominates on a 0.5–2 ns time scale below the threshold of stimulated emission. The overall Auger coefficients for carrier densities of about 1018cm−3are derived from the data and have values ofcAPbSe=1.1±0.3×10−28cm6/s andcAPbTe=2.5±1.3×10−28cm6/s. ©1995 American Institute of Physics.
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