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Fast recombination processes in lead chalcogenide semiconductors studied via transient optical nonlinearities

 

作者: Robert Klann,   Thomas Ho¨fer,   Rainer Buhleier,   Thomas Elsaesser,   Jens W. Tomm,  

 

期刊: Journal of Applied Physics  (AIP Available online 1995)
卷期: Volume 77, issue 1  

页码: 277-286

 

ISSN:0021-8979

 

年代: 1995

 

DOI:10.1063/1.359388

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Third‐order optical nonlinearities and recombination processes of photoexcited electron‐hole plasma in PbSe and PbTe are directly monitored by picosecond pump‐probe experiments in the wavelength range from 3 to 10 &mgr;m. After excitation, a strong blue shift of the absorption edge and large changes of the refractive index are found. Time‐resolved studies of the absorption changes at lattice temperatures between 70 and 160 K reveal a fast partial decrease of the carrier density within 100 ps at excitation densities exceeding 7×1017cm−3. Comparative emission spectra demonstrate that this behavior is due to recombination by stimulated emission. At room temperature the nonradiative Auger recombination dominates on a 0.5–2 ns time scale below the threshold of stimulated emission. The overall Auger coefficients for carrier densities of about 1018cm−3are derived from the data and have values ofcAPbSe=1.1±0.3×10−28cm6/s andcAPbTe=2.5±1.3×10−28cm6/s. ©1995 American Institute of Physics.

 

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