Highly anisotropic photoenhanced wet etching ofn-type GaN
作者:
C. Youtsey,
I. Adesida,
G. Bulman,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 15
页码: 2151-2153
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119365
出版商: AIP
数据来源: AIP
摘要:
A room-temperature photoelectrochemical etching process forn-type GaN films using a 0.04 M KOH solution and Hg arc lamp illumination is described. The process provides highly anisotropic etch profiles and high etch rates (>300 nm/min) at moderate light intensities (50mW/cm2&at;365 nm). The etch rate and photocurrent are characterized as a function of light intensity for stirred and unstirred solutions, and the etch process is found to be diffusion limited for light intensities greater than 20mW/cm2&at;365 nm. A reaction mechanism for the etch process is proposed. ©1997 American Institute of Physics.
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