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Electronic effects on defect behavior in semiconductors

 

作者: J.C. Bourgoin,  

 

期刊: Radiation Effects and Defects in Solids  （Taylor Available online 1989）
卷期: Volume 111-112, issue 1-2  

页码: 29-36

 

ISSN:1042-0150

 

年代: 1989

 

DOI:10.1080/10420158908212978

 

出版商: Taylor & Francis Group

 

数据来源: Taylor

 

摘要:

The effect induced by carrier trapping on the configuration and migration of defects in semiconductors are examined in light of the different predicted mechanisms.

 

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