The problem of identification of the dominant recombination center in platinum‐doped silicon is investigated using deep‐level transient spectroscopy (DLTS). Measurements using electrical and optical injection on platinum‐dopedntype silicon are reported. Results of measurements show that the recently observed platinum‐related midgap level is an efficient recombination center and is probably responsible for the role of platinum as a lifetime killer. In addition, information is provided on the relative magnitudes of the electron and hole capture cross sections of the hitherto well‐known deep levels assigned to platinum.