The effect of surface states and fixed charge on the field effect conductance of amorphous silicon
作者:
M. J. Powell,
J. Pritchard,
期刊:
Journal of Applied Physics
(AIP Available online 1983)
卷期:
Volume 54,
issue 6
页码: 3244-3248
ISSN:0021-8979
年代: 1983
DOI:10.1063/1.332486
出版商: AIP
数据来源: AIP
摘要:
We have developed a computer program to calculate the field effect conductance for an amorphous semiconductor including the effects of surface states and fixed charge atbothsurfaces of the thin semiconductor film. For undoped films with a bulk density of states of less than 1017cm−3eV−1, the space‐charge region extends to a depth of 0.5 &mgr;m. A complete description of the potential distribution in the semiconductor must include the contribution of surface charge from the surfaceoppositethe gate electrode. This is of practical importance in thin film transistors, for example, where different transistor structures and processing of devices can affect the charge density of this surface.
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